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LAPT
2SC4886
Application : Audio and General Purpose
(Ta=25C) 2SC4886 100max 100max 150min 50min 2.0max 60typ 200typ V MHz
16.2
Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1860) sAbsolute maximum ratings (Ta=25C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC4886 150 150 5 14 3 80(Tc=25C) 150 -55 to +150 Unit V V V A A W C C
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB hFE Rank Conditions VCB=150V VEB=5V IC=25mA VCE=4V, IC=5A IC=5A, IB=500mA VCE=12V, IE=-2A VCB=10V, f=1MHz
External Dimensions FM100(TO3PF)
0.80.2 15.60.2 5.50.2 3.45 0.2 5.5 o3.30.2 1.6
Unit
A
V
23.00.3 9.50.2
A
a b
pF
1.75 2.15 1.05 +0.2 -0.1 5.450.1 1.5 4.4 5.450.1 1.5 0.65 +0.2 -0.1
3.3
0.8
O(50 to 100), P(70 to 140), Y(90 to 180)
sTypical Switching Characteristics (Common Emitter)
VCC (V) 60 RL () 12 IC (A) 5 VBB1 (V) 10 VBB2 (V) -5 IB1 (A) 0.5 IB2 (A) -0.5 ton (s) 0.26typ tstg (s) 1.5typ tf (s) 0.35typ
3.35
B
C
E
Weight : Approx 6.5g a. Type No. b. Lot No.
IC - VCE Characteristics (Typical)
0m
400m A
A 300m
VCE( sat ) - IB Characteristics (Typical)
Collector-Emitter Saturation Voltage V C E (s at)( V ) 3
IC - V BE Temperature Characteristics (Typical)
14 (V CE= 4V)
14
75 A
A 0m 60 0mA 50
200m
A
A
Collector Current I C (A)
Collector Current I C( A)
10
150m
10
2
10 0m A
em
5
eT
1
as
12
C
5A 0 0 0.2 0.4 0.6 0.8 1.0 0 0
0
0
1
2
3
4
-30
25
1 Base-Emittor Voltage V B E( V)
C
IB=20mA
5C
IC=10A
(Ca
(C
se
Tem
50m A
5
p)
p)
3.0
2
Collector-Emitter Voltage V C E( V)
Base Current I B( A)
hFE - I C Characteristics (Typical)
(V C E= 4V) 200 DC Curr ent Gain h F E
h FE - IC Temperature Characteristics (Typical)
(VCE=4V) 200 125C DC Cur rent Gain h FE
j - a( C/W)
j-a - t Characteristics
3
100
Typ
100
Transient Thermal Resistance
25C -30C
1
0.5
50
50
20 0.02
0.1
0.5
1
5
10 14
20 0.02
0.1
0.5
1
5
10 14
0.1
1
10
100 Time t(ms)
1000 2000
Collector Current I C( A)
Collector Current I C( A)
fT - IE Characteristics (Typical)
(VCE=12V) 80 40
Safe Operating Area (Single Pulse)
80
1m s
P c - T a Derating
Cut-o ff F requ ency f T( MH Z)
Typ
60 Co lle ctor Cu rre nt I C (A)
10 5
10
m
DC
0m
s
s
M aximum Power Dissipa ti on P C( W)
10
60
W ith In fin ite he
40
40
at si
1 0.5 Without Heatsink Natural Cooling 0.1
nk
20
20
Without Heatsink 5 10 50 100 200 150 3.5 0 0 25 50 75 100 125 150
0 -0.02
-0.1
-1
-10
0.05 2
Emitter Current I E( A)
Collector-Emitter Voltage V C E( V)
Ambient Temperature Ta(C)
119

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